Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric
نویسندگان
چکیده
منابع مشابه
Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric
Although several high-k insulators have been deposited on the diamond for metal-insulator-semiconductor field effect transistors (MISFETs) fabrication, the k values and current output are still not fully satisfactory. Here, we present a high-k ZrO2 layer on the diamond for the MISFETs. The k value for ZrO2 is determined by capacitance-voltage characteristic to be 15.4. The leakage current densi...
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ژورنال
عنوان ژورنال: Scientific Reports
سال: 2014
ISSN: 2045-2322
DOI: 10.1038/srep06395